Wolfspeed C3M SiC N-Channel MOSFET, 35 A, 1000 V, 4-Pin TO-247-4 C3M0065100K

Κωδικός Προϊόντος της RS: 125-3453Κατασκευαστής: WolfspeedΚωδικός Κατασκευαστή: C3M0065100K
brand-logo
Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

1000 V

Series

C3M

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

113.5 W

Maximum Gate Source Voltage

-8 V, +19 V

Length

16.13mm

Typical Gate Charge @ Vgs

35 nC @ 15 V, 35 nC @ 4 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Width

5.21mm

Transistor Material

SiC

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

4.8V

Height

23.6mm

Λεπτομέρειες Προϊόντος

Silicon Carbide Power MOSFET, C3M Series, Cree Inc.

MOSFET Transistors, Cree Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

€ 28,61

€ 28,61 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 35,48

€ 35,48 Μονάδας Με Φ.Π.Α

Wolfspeed C3M SiC N-Channel MOSFET, 35 A, 1000 V, 4-Pin TO-247-4 C3M0065100K
Επιλέγξτε συσκευασία

€ 28,61

€ 28,61 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 35,48

€ 35,48 Μονάδας Με Φ.Π.Α

Wolfspeed C3M SiC N-Channel MOSFET, 35 A, 1000 V, 4-Pin TO-247-4 C3M0065100K

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδας
1 - 24€ 28,61
25 - 74€ 26,52
75 - 149€ 26,18
150+€ 25,95

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

1000 V

Series

C3M

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

113.5 W

Maximum Gate Source Voltage

-8 V, +19 V

Length

16.13mm

Typical Gate Charge @ Vgs

35 nC @ 15 V, 35 nC @ 4 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Width

5.21mm

Transistor Material

SiC

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

4.8V

Height

23.6mm

Λεπτομέρειες Προϊόντος

Silicon Carbide Power MOSFET, C3M Series, Cree Inc.

MOSFET Transistors, Cree Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more