Wolfspeed SiC N-Channel MOSFET, 30 A, 1200 V, 3-Pin TO-247 C3M0075120D

Κωδικός Προϊόντος της RS: 192-3376Κατασκευαστής: WolfspeedΚωδικός Κατασκευαστή: C3M0075120D
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

1.7V

Maximum Power Dissipation

113.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, 19 V

Number of Elements per Chip

1

Width

5.21mm

Length

16.13mm

Typical Gate Charge @ Vgs

54 nC @ 4/15V

Transistor Material

SiC

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

21.1mm

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 594,30

€ 19,81 Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α

€ 736,93

€ 24,564 Μονάδας (Σε μία ράγα των 30) Με Φ.Π.Α

Wolfspeed SiC N-Channel MOSFET, 30 A, 1200 V, 3-Pin TO-247 C3M0075120D

€ 594,30

€ 19,81 Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α

€ 736,93

€ 24,564 Μονάδας (Σε μία ράγα των 30) Με Φ.Π.Α

Wolfspeed SiC N-Channel MOSFET, 30 A, 1200 V, 3-Pin TO-247 C3M0075120D
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

1.7V

Maximum Power Dissipation

113.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, 19 V

Number of Elements per Chip

1

Width

5.21mm

Length

16.13mm

Typical Gate Charge @ Vgs

54 nC @ 4/15V

Transistor Material

SiC

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

21.1mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more