SiC N-Channel MOSFET, 30 A, 1200 V, 4-Pin TO-247-4 Wolfspeed C3M0075120K

Κωδικός Προϊόντος της RS: 192-3375Κατασκευαστής: WolfspeedΚωδικός Κατασκευαστή: C3M0075120K
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.6V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

113.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, 19 V

Width

5.21mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

SiC

Length

16.13mm

Typical Gate Charge @ Vgs

53 nC @ 4/15V

Height

23.6mm

Minimum Operating Temperature

-55 °C

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 19,13

Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α

€ 23,721

Μονάδας (Σε μία ράγα των 30) (Including VAT) Με Φ.Π.Α

SiC N-Channel MOSFET, 30 A, 1200 V, 4-Pin TO-247-4 Wolfspeed C3M0075120K

€ 19,13

Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α

€ 23,721

Μονάδας (Σε μία ράγα των 30) (Including VAT) Με Φ.Π.Α

SiC N-Channel MOSFET, 30 A, 1200 V, 4-Pin TO-247-4 Wolfspeed C3M0075120K
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.6V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

113.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, 19 V

Width

5.21mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

SiC

Length

16.13mm

Typical Gate Charge @ Vgs

53 nC @ 4/15V

Height

23.6mm

Minimum Operating Temperature

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more