SiC N-Channel MOSFET, 22 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0120090J

Κωδικός Προϊόντος της RS: 192-3378Κατασκευαστής: WolfspeedΚωδικός Κατασκευαστή: C3M0120090J
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

900 V

Package Type

TO-263-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, 18 V

Width

9.12mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

SiC

Length

10.23mm

Typical Gate Charge @ Vgs

17.3 nC @ 4/15V

Height

4.57mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

United States

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 13,38

Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α

€ 16,591

Μονάδας (Σε μία ράγα των 50) (Including VAT) Με Φ.Π.Α

SiC N-Channel MOSFET, 22 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0120090J

€ 13,38

Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α

€ 16,591

Μονάδας (Σε μία ράγα των 50) (Including VAT) Με Φ.Π.Α

SiC N-Channel MOSFET, 22 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0120090J
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

900 V

Package Type

TO-263-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, 18 V

Width

9.12mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

SiC

Length

10.23mm

Typical Gate Charge @ Vgs

17.3 nC @ 4/15V

Height

4.57mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

United States

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more