Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
11.5 A
Maximum Drain Source Voltage
900 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
360 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
54 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +18 V
Maximum Operating Temperature
+150 °C
Transistor Material
SiC
Length
16.13mm
Typical Gate Charge @ Vgs
9.5 nC @ 15 V
Width
21.1mm
Number of Elements per Chip
1
Forward Diode Voltage
4.8V
Height
5.21mm
Minimum Operating Temperature
-55 °C
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
€ 6,02
Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α
€ 7,465
Μονάδας (Σε μία ράγα των 30) (Including VAT) Με Φ.Π.Α
30
€ 6,02
Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α
€ 7,465
Μονάδας (Σε μία ράγα των 30) (Including VAT) Με Φ.Π.Α
30
Αγοράστε μαζικά
Quantity Ποσότητα | Τιμή μονάδας | Per Ράγα |
---|---|---|
30 - 120 | € 6,02 | € 180,60 |
150 - 270 | € 5,97 | € 179,10 |
300+ | € 5,90 | € 177,00 |
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
11.5 A
Maximum Drain Source Voltage
900 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
360 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
54 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +18 V
Maximum Operating Temperature
+150 °C
Transistor Material
SiC
Length
16.13mm
Typical Gate Charge @ Vgs
9.5 nC @ 15 V
Width
21.1mm
Number of Elements per Chip
1
Forward Diode Voltage
4.8V
Height
5.21mm
Minimum Operating Temperature
-55 °C
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.