N-Channel MOSFET, 100 A, 25 V, 8-Pin TSDSON Infineon BSC009NE2LSATMA1
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
25 V
Series
OptiMOS
Package Type
TSDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
900 μΩ
Channel Mode
Enhancement
Maximum Power Dissipation
96 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.35mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
72 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.1mm
Height
1.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Λεπτομέρειες Προϊόντος
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 1,44
Μονάδας (Σε ένα καρούλι των 5000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 1,786
Μονάδας (Σε ένα καρούλι των 5000) (Including VAT) Με Φ.Π.Α
5000
€ 1,44
Μονάδας (Σε ένα καρούλι των 5000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 1,786
Μονάδας (Σε ένα καρούλι των 5000) (Including VAT) Με Φ.Π.Α
5000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
25 V
Series
OptiMOS
Package Type
TSDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
900 μΩ
Channel Mode
Enhancement
Maximum Power Dissipation
96 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.35mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
72 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.1mm
Height
1.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Λεπτομέρειες Προϊόντος
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products