N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON Infineon BSC040N10NS5ATMA1

Κωδικός Προϊόντος της RS: 170-2309Κατασκευαστής: InfineonΚωδικός Κατασκευαστή: BSC040N10NS5ATMA1
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™ 5

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

5.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

139 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

6.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.49mm

Typical Gate Charge @ Vgs

58 nC @ 10 V

Height

1.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 1,89

Μονάδας (Σε ένα καρούλι των 5000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 2,344

Μονάδας (Σε ένα καρούλι των 5000) Με Φ.Π.Α

N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON Infineon BSC040N10NS5ATMA1

€ 1,89

Μονάδας (Σε ένα καρούλι των 5000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 2,344

Μονάδας (Σε ένα καρούλι των 5000) Με Φ.Π.Α

N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON Infineon BSC040N10NS5ATMA1
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™ 5

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

5.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

139 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

6.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.49mm

Typical Gate Charge @ Vgs

58 nC @ 10 V

Height

1.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more