N-Channel MOSFET, 90 A, 850 V, 3-Pin PLUS264 IXYS IXFB90N85X

Κωδικός Προϊόντος της RS: 146-4383Κατασκευαστής: IXYSΚωδικός Κατασκευαστή: IXFB90N85X
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Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

90 A

Maximum Drain Source Voltage

850 V

Series

HiperFET

Package Type

PLUS264

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

41 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

1.79 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

5.31mm

Number of Elements per Chip

1

Length

20.29mm

Typical Gate Charge @ Vgs

340 @ 10 V nC

Maximum Operating Temperature

+150 °C

Height

26.59mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 52,83

Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 65,51

Μονάδας (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 90 A, 850 V, 3-Pin PLUS264 IXYS IXFB90N85X

1

Διατίθεται σε πολλαπλάσια από 1
1€ 52,83
2€ 105,66
3€ 158,49
4€ 211,32
5€ 254,85
6€ 305,82
7€ 356,79
8€ 407,76
9€ 458,73
10€ 503,60
11€ 553,96
12€ 604,32
13€ 654,68
14€ 705,04
15€ 755,40

€ 52,83

Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 65,51

Μονάδας (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 90 A, 850 V, 3-Pin PLUS264 IXYS IXFB90N85X
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

1

Διατίθεται σε πολλαπλάσια από 1
1€ 52,83
2€ 105,66
3€ 158,49
4€ 211,32
5€ 254,85
6€ 305,82
7€ 356,79
8€ 407,76
9€ 458,73
10€ 503,60
11€ 553,96
12€ 604,32
13€ 654,68
14€ 705,04
15€ 755,40

Αγοράστε μαζικά

Quantity ΠοσότηταΤιμή μονάδας
1 - 4€ 52,83
5 - 9€ 50,97
10+€ 50,36

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

90 A

Maximum Drain Source Voltage

850 V

Series

HiperFET

Package Type

PLUS264

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

41 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

1.79 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

5.31mm

Number of Elements per Chip

1

Length

20.29mm

Typical Gate Charge @ Vgs

340 @ 10 V nC

Maximum Operating Temperature

+150 °C

Height

26.59mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more