N-Channel MOSFET, 66 A, 500 V, 4-Pin SOT-227 IXYS IXFN80N50P
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
66 A
Maximum Drain Source Voltage
500 V
Series
HiperFET, Polar
Package Type
SOT-227
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
700 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
38.2mm
Typical Gate Charge @ Vgs
195 nC @ 10 V
Width
25.07mm
Minimum Operating Temperature
-55 °C
Height
9.6mm
Λεπτομέρειες Προϊόντος
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
€ 48,02
€ 48,02 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 59,54
€ 59,54 Μονάδας Με Φ.Π.Α
Standard
1
€ 48,02
€ 48,02 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 59,54
€ 59,54 Μονάδας Με Φ.Π.Α
Standard
1
Αγοράστε μαζικά
| Quantity Ποσότητα | Τιμή μονάδας |
|---|---|
| 1 - 4 | € 48,02 |
| 5+ | € 39,98 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
66 A
Maximum Drain Source Voltage
500 V
Series
HiperFET, Polar
Package Type
SOT-227
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
700 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
38.2mm
Typical Gate Charge @ Vgs
195 nC @ 10 V
Width
25.07mm
Minimum Operating Temperature
-55 °C
Height
9.6mm
Λεπτομέρειες Προϊόντος
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products