N-Channel MOSFET, 184 A, 55 V, 4-Pin LFPAK, SOT-669 Nexperia BUK9Y19-55B,115

Κωδικός Προϊόντος της RS: 170-4884Κατασκευαστής: NexperiaΚωδικός Κατασκευαστή: BUK9Y19-55B,115
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

184 A

Maximum Drain Source Voltage

55 V

Series

BUK9Y19

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

85 W

Transistor Configuration

Single

Maximum Gate Source Voltage

15 V

Length

5mm

Typical Gate Charge @ Vgs

18 nC @ 5 V

Width

4.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Automotive Standard

AEC-Q101

Height

1.05mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

Philippines

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 0,86

Μονάδας (Σε ένα καρούλι των 1500) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1,066

Μονάδας (Σε ένα καρούλι των 1500) Με Φ.Π.Α

N-Channel MOSFET, 184 A, 55 V, 4-Pin LFPAK, SOT-669 Nexperia BUK9Y19-55B,115

€ 0,86

Μονάδας (Σε ένα καρούλι των 1500) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1,066

Μονάδας (Σε ένα καρούλι των 1500) Με Φ.Π.Α

N-Channel MOSFET, 184 A, 55 V, 4-Pin LFPAK, SOT-669 Nexperia BUK9Y19-55B,115
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

184 A

Maximum Drain Source Voltage

55 V

Series

BUK9Y19

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

85 W

Transistor Configuration

Single

Maximum Gate Source Voltage

15 V

Length

5mm

Typical Gate Charge @ Vgs

18 nC @ 5 V

Width

4.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Automotive Standard

AEC-Q101

Height

1.05mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

Philippines

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more