Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-1.5 A
Maximum Collector Emitter Voltage
-150 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Collector Base Voltage
-150 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
4 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
9.9 x 4.5 x 9.2mm
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
Small Signal PNP Transistors, 60 to 160V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
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Παρακαλούμε ελέγξτε ξανά αργότερα.
P.O.A.
Συσκευασία Παραγωγής (Ράγα)
5
P.O.A.
Συσκευασία Παραγωγής (Ράγα)
5
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-1.5 A
Maximum Collector Emitter Voltage
-150 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Collector Base Voltage
-150 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
4 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
9.9 x 4.5 x 9.2mm
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
Small Signal PNP Transistors, 60 to 160V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.