Dual P-Channel MOSFET, 4.1 A, 20 V, 8-Pin ChipFET onsemi NTHD4102PT1G

Κωδικός Προϊόντος της RS: 163-1110Κατασκευαστής: onsemiΚωδικός Κατασκευαστή: NTHD4102PT1G
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

4.1 A

Maximum Drain Source Voltage

20 V

Package Type

ChipFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

170 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Width

1.7mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3.1mm

Typical Gate Charge @ Vgs

7.6 nC @ 4.5 V

Height

1.1mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

Malaysia

Λεπτομέρειες Προϊόντος

Dual P-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 0,66

Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,818

Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α

Dual P-Channel MOSFET, 4.1 A, 20 V, 8-Pin ChipFET onsemi NTHD4102PT1G

€ 0,66

Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,818

Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α

Dual P-Channel MOSFET, 4.1 A, 20 V, 8-Pin ChipFET onsemi NTHD4102PT1G
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

4.1 A

Maximum Drain Source Voltage

20 V

Package Type

ChipFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

170 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Width

1.7mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3.1mm

Typical Gate Charge @ Vgs

7.6 nC @ 4.5 V

Height

1.1mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

Malaysia

Λεπτομέρειες Προϊόντος

Dual P-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more