
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Drain Source Voltage Vds
65V
Package Type
B4E
Series
RF2L
Mount Type
Surface
Pin Count
4
Channel Mode
Enhancement
Maximum Operating Temperature
200°C
Transistor Configuration
Single
Length
27.94mm
Height
9.4mm
Standards/Approvals
RoHS
Typical Power Gain
14dB
Automotive Standard
No
Λεπτομέρειες Προϊόντος
The STMicroelectronics RF2L16180CB4 is 180 W, 28 V internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz. Four leads can be configured as single ended, 180 degree push-pull or 90 degree hybrid or Doherty with proper external matching network.
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
P.O.A.
Μονάδας (Σε ένα καρούλι των 120) (Exc. Vat)Χωρίς Φ.Π.Α
120
P.O.A.
Μονάδας (Σε ένα καρούλι των 120) (Exc. Vat)Χωρίς Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
120
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Drain Source Voltage Vds
65V
Package Type
B4E
Series
RF2L
Mount Type
Surface
Pin Count
4
Channel Mode
Enhancement
Maximum Operating Temperature
200°C
Transistor Configuration
Single
Length
27.94mm
Height
9.4mm
Standards/Approvals
RoHS
Typical Power Gain
14dB
Automotive Standard
No
Λεπτομέρειες Προϊόντος
The STMicroelectronics RF2L16180CB4 is 180 W, 28 V internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz. Four leads can be configured as single ended, 180 degree push-pull or 90 degree hybrid or Doherty with proper external matching network.