STMicroelectronics MDmesh N-Channel MOSFET, 4 A, 1500 V, 3-Pin TO-247 STW4N150

Κωδικός Προϊόντος της RS: 920-6566Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: STW4N150
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

1500 V

Series

MDmesh

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

7 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

15.75mm

Typical Gate Charge @ Vgs

30 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

5.15mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

20.15mm

Λεπτομέρειες Προϊόντος

N-Channel MDmesh™, 800V/1500V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 227,10

€ 7,57 Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α

€ 281,60

€ 9,387 Μονάδας (Σε μία ράγα των 30) Με Φ.Π.Α

STMicroelectronics MDmesh N-Channel MOSFET, 4 A, 1500 V, 3-Pin TO-247 STW4N150

€ 227,10

€ 7,57 Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α

€ 281,60

€ 9,387 Μονάδας (Σε μία ράγα των 30) Με Φ.Π.Α

STMicroelectronics MDmesh N-Channel MOSFET, 4 A, 1500 V, 3-Pin TO-247 STW4N150
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ideate. Create. Collaborate

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

1500 V

Series

MDmesh

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

7 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

15.75mm

Typical Gate Charge @ Vgs

30 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

5.15mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

20.15mm

Λεπτομέρειες Προϊόντος

N-Channel MDmesh™, 800V/1500V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more