N-Channel MOSFET, 100 A, 25 V, 8-Pin SON Texas Instruments CSD16413Q5A

Κωδικός Προϊόντος της RS: 827-4798Κατασκευαστής: Texas InstrumentsΚωδικός Κατασκευαστή: CSD16413Q5A
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

25 V

Package Type

SON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

5.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.9V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +16 V

Maximum Operating Temperature

+150 °C

Length

5.8mm

Typical Gate Charge @ Vgs

9 nC @ 4.5 V

Width

5mm

Number of Elements per Chip

1

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.1mm

Series

NexFET

Λεπτομέρειες Προϊόντος

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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N-Channel MOSFET, 100 A, 25 V, 8-Pin SON Texas Instruments CSD16413Q5A
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P.O.A.

N-Channel MOSFET, 100 A, 25 V, 8-Pin SON Texas Instruments CSD16413Q5A
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Επιλέγξτε συσκευασία

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

25 V

Package Type

SON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

5.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.9V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +16 V

Maximum Operating Temperature

+150 °C

Length

5.8mm

Typical Gate Charge @ Vgs

9 nC @ 4.5 V

Width

5mm

Number of Elements per Chip

1

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.1mm

Series

NexFET

Λεπτομέρειες Προϊόντος

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more