Nexperia N-Channel MOSFET, 320 mA, 60 V, 3-Pin SOT-323 BSS138PW,115
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
310 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.2mm
Typical Gate Charge @ Vgs
0.72 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Χώρα Προέλευσης
Malaysia
Λεπτομέρειες Προϊόντος
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
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€ 8,00
€ 0,08 Μονάδας (Σε ένα καρούλι των 100) (Exc. Vat)Χωρίς Φ.Π.Α
€ 9,92
€ 0,099 Μονάδας (Σε ένα καρούλι των 100) Με Φ.Π.Α
Standard
100
€ 8,00
€ 0,08 Μονάδας (Σε ένα καρούλι των 100) (Exc. Vat)Χωρίς Φ.Π.Α
€ 9,92
€ 0,099 Μονάδας (Σε ένα καρούλι των 100) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Standard
100
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
| Quantity Ποσότητα | Τιμή μονάδας | Per Καρούλι |
|---|---|---|
| 100 - 100 | € 0,08 | € 8,00 |
| 200 - 400 | € 0,08 | € 8,00 |
| 500 - 900 | € 0,08 | € 8,00 |
| 1000 - 1900 | € 0,05 | € 5,00 |
| 2000+ | € 0,05 | € 5,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
310 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.2mm
Typical Gate Charge @ Vgs
0.72 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Χώρα Προέλευσης
Malaysia
Λεπτομέρειες Προϊόντος
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products