N-Channel MOSFET, 2.7 A, 55 V, 3 + Tab-Pin SOT-223 Infineon IRFL014NPBF
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
2.7 A
Maximum Drain Source Voltage
55 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3 + Tab
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.7mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.7mm
Typical Gate Charge @ Vgs
7 nC @ 10 V
Number of Elements per Chip
1
Height
1.7mm
Series
HEXFET
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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P.O.A.
Μονάδας (Σε μία ράγα των 80) (Exc. Vat)Χωρίς Φ.Π.Α
80
P.O.A.
Μονάδας (Σε μία ράγα των 80) (Exc. Vat)Χωρίς Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
80
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
2.7 A
Maximum Drain Source Voltage
55 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3 + Tab
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.7mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.7mm
Typical Gate Charge @ Vgs
7 nC @ 10 V
Number of Elements per Chip
1
Height
1.7mm
Series
HEXFET
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products